| PART |
Description |
Maker |
| IC42S32800 IC42S32800-6B IC42S32800-6BG IC42S32800 |
2M x 32 Bit x 4 Banks (256-MBIT) SDRAM
DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| SST31LF043A-70-4C-WI SST31LF041-300-4E-WH SST31LF0 |
4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory 4 Mbit闪存1兆位56千位的SRAM ComboMemory
4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory 4 Mbit闪存1兆位56千位SRAM ComboMemory
4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PDSO32
XTAL MTL SMT HC49/USM 4 Mbit闪存1兆位56千位的SRAM ComboMemory
XTAL CER SMT 7X5 2PAD
16-Bit Delta-Sigma ADC with internal reference, PGA and oscillator. I2C Serial Interface 6-SOT-23
DIODE SWITCH 75V 350MW SOT-23
RECTIFIER SCHOTTKY SINGLE 5A 60V 175A-Ifsm 0.7Vf 0.5A-IR SMC 3K/REEL
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
| K4S641632C-TC_L10 K4S641632C-TC_L1H K4S641632C-TC_ |
1M x 16Bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| HY57V561620CLT HY57V561620CT |
4 Banks x 4M x 16Bit Synchronous DRAM
|
Hynix Semiconductor
|
| K4S511533F-YF |
8M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
| K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/ |
1M x 16Bit x 4 Banks Synchronous DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TTS3816B4E |
2M x 16Bit x 4 Banks synchronous DRAM
|
TwinMOS
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| K4S281632E-TC7C K4S281632E-TL7C |
2M x 16bit x 4 banks synchronous DRAM LVTTL, 133MHz
|
Samsung Electronic
|
